SemiConductor Devices

Material Growth (LPE & MBE)

Epiwafers for detector fabrication is developed and produced using the LPE (liquid phase epitaxy) and MBE (molecular beam epitaxy) methods. Home-built LPE systems are used for MCT while for the growth of antimony containing III-V materials we are using commercial MBE systems for development and for production. Those machines have multiple wafer capability and are equipped with all the necessary in-situ diagnostics for accurate calibration and growth. Prior to processing all epiwafers are characterized using various methods including optical microscopy, IR transmission, photoluminescence, HRXRD, defect count and surface quality.

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