SemiConductor Devices

Year 2009

30 Years of HgCdTe Technology in Israel

Eliezer Weiss SCD – SemiConductor Devices, P.O. Box 2250/99, Haifa 31021, Israel

High Power Laser Diodes at SCD: Performance and reliability for defence and space applications

Shlomo Risemberg, Yoram Karni, Genadi Klumel, Moshe Levy, Yuri Berk, Markus Rech(1), Hubert Becht(1), Bruno Frei(2) SCD-Semiconductor Devices, P.O.Box 2250, Haifa, 31021, Israel
(1)Carl Zeiss Optronics GmbH, Carl-Zeiss-Strasse 22, Oberkochen 73447, Germany

High resolution 1280×1024, 15 μm pitch compact InSb IR detector with on-chip ADC

O. Nesher, I. Pivnik, E. Ilan, Z. Calahorra, A. Koifman, I Vaserman, J. Oiknine Schlesinger, R. Gazit and I. Hirsh SemiConductor Devices P.O. Box 2250, Haifa 31021, Israel

Progress with Antimonide Based Detectors at SCD

Olga Klin, Steve Grossman, Noam Snapi, Maya Brumer, Inna Lukomsky, Michael Yassen, Boris Yofis, Alex Glozman, Ami Zemel, Tal Fishman, Eyal Berkowicz, Osnat Magen, Joelle Oiknine-Schlesinger, Itay Shtrichman, Eliezer Weiss, and P.C. Klipstein Semiconductor Devices, P O Box 2250, Haifa 31021, ISRAEL

The Architecture and Performance of SCD's 17µm Pitch VOx µ-Bolometer Detector

A. Fraenkel, U. Mizrahi, L. Bikov, A. Giladi, N. Shiloah, S. Elkind, T. Czyzewski, I. Kogan and A. Amsterdam SemiConductor Devices (SCD), P.O. Box 2250, Haifa 31021, Israel
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