Year 2017

Year 2017

10µm pitch family of InSb and XBn detectors for MWIR imaging

G. Gershon, E. Avnon, M. Brumer, W. Freiman, Y. Karni, T. Niderman, O. Ofer, T. Rosenstock, D. Seref, N. Shiloah, L. Shkedy, R. Tessler, and I. Shtrichman SemiConductor Devices (SCD), P.O. Box 2250, Haifa 31021, Israel

Attenuation of cryocooler induced vibration using multimodal tuned dynamic absorbers

Alexander Veprik, Vladimir Babitsky, Avi Tuito SemiConductor Devices POB 2250, Haifa 31021, Israel
Loughborough University, Epinal Way, Loughborough, LE11 3TU, UK
Israel Ministry of Defense, Kirya, Tel Aviv, 64734, Israel

Development of low SWaP and low noise InGaAs detectors

R. Fraenkel, E. Berkowicz, L. Bikov, R. Elishkov, A. Giladi, I. Hirsh, E. Ilan, C. Jakobson, P. Kondrashov, E. Louzon, I. Nevo, I. Pivnik, A. Tuito* and S. Vasserman SemiConductor Devices, P.O. Box 2250, Haifa 31021, Israel
* Israel MOD

High-Power Laser Diodes with High Polarization Purity

Etai Rosenkrantz, Dan Yanson*, Ophir Peleg, Moshe Blonder, Noam Rappaport, and Genady Klumel SCD – SemiConductor Devices, P.O.Box 2250/99, Haifa 31021, Israel

InAs/(GaSb,AlSb) and HgTe/CdTe superlattices: detector materials with topological properties

P.C. Klipstein SemiConductor Devices P.O. Box 2250, Haifa 31021, Israel
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