In a photodiode made from a narrow band gap III-V material such as InSb, the dark current is usually dominated by thermal generation-recombination (GR) in the depletion region. In an XBn or XBp barrier detector, the GR current is suppressed by confining the depletion region to a wide band gap barrier material with a band alignment that blocks majority carriers. Diffusion limited barrier detectors are essentially unipolar and represent a device architecture with unity gain that is fundamentally different from that of the traditional photodiode. High performance barrier detector arrays spanning the mid- and long-wave infrared atmospheric transparency windows are...
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