The InAs/InSb/GaSb/AlSb family of III-V alloys and superlattice materials offer unique possibilities for band structure engineering, because they can be grown on GaSb or InSb substrates with high quality and satisfactory control of strain, doping and composition. The band profiles and oscillator strengths are also quite predictable, enabling full simulation of detector performance from a basic knowledge of layer and stack thicknesses. In conventional III-V p-n devices, Shockley-Read-Hall (SRH) traps generate a significant flow of thermal carriers in the device depletion region. At SCD, we have overcome this problem by developing XBn and XBp barrier device architectures that suppress these...
01011101010100010100111000010100010011010101100001001100010111100101011001001110010101110101110100010100010100100101110000010100010101110101100001011101000101000100101001011111010010100101001001010101010010100100101101010101010011100001010001001111010110000101101100010100010011110101111001011011010111010101000101001110010110110001010001011111010100100100111001100000010100100101011101010000