YEAR 2008
New Features and Development Directions in SCD's μ-Bolometer Technology
U. Mizrahi, L. Bikov, A. Giladi, A. Adin, N. Shiloah, E. Malkinson, T. Czyzewski, A. Amsterdam, Y. Sinai and A. Fraenkel
SemiConductor Devices (SCD), P.O. Box 2250, Haifa 31021, Israel
 
ABSTRACT
In this paper we report on new developments associated with SCD VOx 5-Bolometer product line. Lately, we have introduced the BIRD6401,2, which is a high-sensitivity (< 50 mK @ F/1, 60Hz) VGA format detector with 25 5m pitch. In the first part we present new data extracted from extensive measurements. These measurements were conducted under various environmental and power constraints, exhibiting superior temporal sensitivity, long-term stability and operational flexibility. In the second part we describe the system implications of special features that were embedded within the FPA. Explicitly, we will address the benefits of some special features aimed at lowering the system power dissipation while maintaining low temporal and spatial NETD. Finally, in the last part we outline SCD's future roadmap and development directions. We will elaborate on our latest progress towards improved pixel sensitivity (25mK@F/1), advanced 0.18um ROIC technology, and the combination of the two towards smaller pitch (17 5m) arrays.
 
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"XBn" Barrier Photodetectors for High Sensitivity and
High Operating Temperature Infrared Sensors
 Philip Klipstein
Semiconductor Devices, P O Box 2250, Haifa 31021, ISRAEL
 
ABSTRACT
 A barrier photodetector is a device in which the light is absorbed in a narrow bandgap semiconductor layer whose bands remain essentially flat or accumulated at the operating bias so that all carrier depletion is excluded. In a conventional photodiode below a threshold temperature T0, typically 130-150K for MWIR devices, the dark current is due to Generation-Recombination (G-R) centres in the depletion layer. In a barrier detector, the absence of depletion in the narrow bandgap semiconductor ensures that the G-R contribution to the dark current is negligible. The dark current in the barrier detector is thus dominated by the diffusion component, both above and below T0. Therefore, at a given temperature below T0, a barrier detector will exhibit a lower dark current than a conventional photodiode with the same cut-off wavelength. Alternatively, for a given dark current, a barrier detector will operate at a higher temperature than a conventional photodiode, provided that this temperature is below T0. Device architectures are presented for barrier detectors with photon absorbing layers based on InAs1-xSbx alloys and type-II InAs/GaSb superlattices (T2SL). The thermionic and tunneling components of the dark current are analyzed and shown to be negligible for typical device parameters. An operating temperature of https://www.scd.co.il150K is estimated for a MWIR barrier detector with f/3 optics and a cut-off wavelength of 4.2um.
 
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